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Thin (40–150 nm), highly doped n+ (1019–1020 cm−3) Ga2O3 layers deposited using pulsed laser deposition (PLD) were incorporated into Ti/Au ohmic contacts on (001) and (010) β-Ga2O3 substrates with carrier concentrations between 2.5 and 5.1 × 1018 cm−3. Specific contact resistivity values were calculated for contact structures both without and with a PLD layer having different thicknesses up to 150 nm. With the exception of a 40 nm PLD layer on the (001) substrate, the specific contact resistivity values decreased with increasing PLD layer thickness: up to 8× on (001) Ga2O3 and up to 16× on (010) Ga2O3 compared with samples without a PLD layer. The lowest average specific contact resistivities were achieved with 150 nm PLD layers: 3.48 × 10−5 Ω cm2 on (001) Ga2O3 and 4.79 × 10−5 Ω cm2 on (010) Ga2O3. Cross-sectional transmission electron microscopy images revealed differences in the microstructure and morphology of the PLD layers on the different substrate orientations. This study describes a low-temperature process that could be used to reduce the contact resistance in Ga2O3 devices. 

Abstract Disorder arising from random locations of charged donors and acceptors introduces localization and diffusive motion that can lead to constructive electron interference and positive magnetoconductivity. At very low temperatures, 3D theory predicts that the magnetoconductivity is independent of temperature or material properties, as verified for many combinations of thin-films and substrates. Here, we find that this prediction is apparently violated if the film thickness d is less than about 300 nm. To investigate the origin of this apparent violation, the magnetoconductivity was measured at temperatures T  = 15 – 150 K in ten, Sn-doped In 2 O 3 films with d  = 13 – 292 nm, grown by pulsed laser deposition on fused silica. We observe a very strong thickness dependence which we explain by introducing a theory that postulates a second source of disorder, namely, non-uniform interface-induced defects whose number decreases exponentially with the interface distance. This theory obeys the 3D limit for the thickest samples and yields a natural figure of merit for interface disorder. It can be applied to any degenerate semiconductor film on any semi-insulating substrate. 

VO₂-based MEMS tunable optical shutters are demonstrated. The design consists of a VO₂-based cantilever attached to a VO₂-based optical window with integrated resistive heaters for individual mechanical actuation of the cantilever structure, tuning of the optical properties of the window, or both. Optical transmittance measurements as a function of current for both heaters demonstrates that the developed devices can be used as analog optical shutters, where the intensity of a light beam can be tuned to any value within the range of VO₂phase transition. A transmittance drop off 30% is shown for the optical window, with tuning capabilities greater than 30% upon actuation of the cantilever. Unlike typical mechanical shutters, these devices are not restricted to binary optical states. Optical modulation of the optical window is demonstrated with an oscillating electrical input. This produces a transmittance signal that oscillates around an average value within the range off VO₂’s phase transition. For an input current signal with fixed amplitude (f_el= 0.28 Hz), tuned to be at the onset of the phase transition, a transmittance modulation of 14% is shown. Similarly, by modulating the DC-offset, a transmittance modulation of VO₂along the hysteresis is obtained.